Application of new layered semiconductor chip materials in lateral junction electronic devices

Advanced chips are the cornerstone of the lowest level of technology in the current information society and the era of artificial intelligence, mastering the material, process, device, design and manufacture of the new generation of chips is one of the main battlefields of the strategic innovation of Science and technology for a long time. Due to the failure of the classical Moore’s law of geometric miniaturization at 90nm node in 2003 and the equivalent Moore’s law at 7nm node in 2020, the miniaturization speed of silicon-based transistors is greatly reduced, the main reason is that the transistor has entered the sub 10nm scale in several geometric dimensions, and the quantum effects of conventional List of semiconductor materials are beginning to emerge, further miniaturization has encountered significant material, process, device structure, manufacturing yield and cost challenges. Therefore, in the post-moore era, how to promote the development of the next generation of high-performance chips through basic research, especially the new materials and new devices is one of the most challenging research directions.

Layered List of semiconductor materials, represented by transition metal disulfide compounds, is considered to be one of the most promising new chip materials, consisting of a variety of layered List of semiconductor materials, for example, homojunction, heterojunction, hybrid multilevel junction and superlattice junction have a variety of tunable electrical and optical properties, which provide a new degree of freedom for the next generation of high-performance electronic devices, it also provides a new research strategy for developing a new generation of chips based on new principles and structures that go beyond the traditional List of semiconductor materials.

Recently, combining the team’s many research achievements in this field, wang Chen, an assistant professor of materials science at Tsinghua University, Li Zhengcao and Xiong Qihua of the Department of Physics have proposed a general research framework for lateral layered semiconductor junctions (fig. 1) , on this basis, the prototype devices and applications of fine controlled synthesis, electronic structure modulation and optical performance control, high performance logic devices and optoelectronic devices with new structures are reviewed, the paper also gives a systematic review of the controversial issues concerning the unique performance advantages of the transverse junction devices and the standard of the optimum width of the transverse junction devices, which have puzzled the industry for many years, the system analysis and prospect for the development of lateral junction of new materials in the future are given (Fig. 2) .

Fig. 1 general research framework of lateral layered semiconductor junction


Fig. 2 core research context and broad prospects for lateral junction of layered semiconductors

This work focuses on the controllable synthesis, multi-dimensional performance control and high-performance device fabrication of lateral layered semiconductor junctions, with the title “Lateral layered semiconductor multijunction for novel electronic devices“, published online April 28 in Chemical Society Reviews, an influential journal in the international field of materials.

The research work has been supported by the National Key R & D program, the National Natural Science Foundation of China and the tsinghua-foshan Innovation Fund.

The research group of Assistant Professor Wang Chen at the Institute of materials is devoted to two ports, namely, new materials for chips and post-moore integrated chips, multi-dimensional research will be conducted in the areas of new List of semiconductor materials, chip interconnecting materials, next-generation semiconductor processes, new-principle high-performance devices, multi-source heterogeneous integrated microsystems and new-generation chips. Professor Li Zhengcao’s research group has long been devoted to the research of material design and irradiation effect, nuclear energy materials and system safety. Professor Xiong Qihua of the Department of Physics has been working on condensed matter spectroscopy, ultrafast spectroscopy, microcavity enhanced light-matter interaction, photonics and optoelectronic devices for a long time.

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