Peking University Peng Lianmao/Wang Sheng: The latest progress of carbon nanotube thin-film light detectors and photoelectric integration applications!

February 20, 2023, Peking UniversityProfessor Peng Lianmao and Associate Researcher Wang ShengA new journal hosted by Tsinghua UniversityNano Research Energy A review article entitled “Recent Progress of Photodetector based on Carbon Nanotube Film and Application in Optoelectronic Integration” was published, which provides a comprehensive introduction to high-purity semiconductor carbon nanotubesPurification and film preparation, carbon nanotube filmInfrared detectorand carbon nanotubesOptoelectronic integrationRecent advances in research.

Figure 1. Carbon nanotube detector and photoelectric integration.

Carbon nanotube materials due to the fact that they haveHigh infrared absorption coefficient(3×105 cm-1)、High mobility(105 cm2 V s-1)、Wide range of substrate adaptationandLow temperature processing processThe characteristics (< 200 °C) have received extensive attention. With the continuous progress of carbon nanotube solution purification technology in recent years, the maturity of the preparation technology of high semiconductor purity carbon nanotube films has laid a material foundation for the preparation of large-area, uniform high-performance optoelectronic devices and logic circuitsCharacteristics and latest research progress of different semiconductor carbon nanotube purification technologies

In terms of the performance research of carbon nanotube thin film infrared detector, the research of different types of carbon nanotube infrared detector is reviewedRepresentative work, summarizing the characteristics of different types of detectors and the latest research progress, includingHeat detectorsPhotoconductive detectorsandPhotovoltaic detectorsWait. At the same time, the characteristics of barrier-free bipolar carbon nanotube diode detector prepared by asymmetric ohmic contact metal were introduced, and a series of research works carried out on this basis were introduced.

Figure 2. Typical mechanism and device structure of infrared detector based on carbon nanotubes.

The article summarizes furtherCarbon nanotube photoelectric integrationCharacteristics and latest research progress. Carbon nanotube films have certain advantages compared with traditional semiconductor materials in optoelectronic devices and integrated circuitsadvantageandpotential, its advantages are as follows:

(1) Carbon nanotubes can simultaneously build high-performance integrated circuits, optical emission and optical detector devices, which is an ideal photoelectric integration platform;

(2) The band gap of semiconductor carbon nanotubes can be adjusted at will, covering the short-wave infrared band;

(3) Carbon nanotube devices can adopt low-temperature and doped-free processing technology to meet the thermal budget requirements of three-dimensional integration;

(4) Carbon nanotubes are one-dimensional semiconductors, and there is no lattice mismatch with the substrate, which is conducive to multi-layer stacked three-dimensional photoelectric integration or chip photoelectric integration.

Three-dimensional optoelectronic integration or chip optoelectronic integration can be great on the one handIncrease the integration density of optoelectronic chips; On the other hand, the collection, storage and processing of information can be done in the piece. The advantages of carbon nanotubes in electronics and optoelectronics help it build optoelectronic integrated systems.

Finally, the authors have a focus on carbon nanotube detectors and photoelectric integrationFuture research directionsA look was made. Although carbon nanotubes have shown great advantages and potential in existing infrared detectors and photoelectric integrated systems, there are also certain challenges in the process of application. Semiconductor purity control, film thickness control, doping effect caused by surface polymers, and metal ohmic contact caused by carbon nanotubes limit the further improvement of device performance. Therefore, the ideal carbon nanotube film needs to meet the following requirements:

(1) Carbon nanotube filmSemiconductor purityIt needs to be greater than 99.9999% and the film has good homogeneity;

(2) Carbon nanotube films have certainThickness controllabilityto ensure light absorption efficiency;

(3) Carbon nanotube filmClean surfaceImpurities such as surface polymers or dispersants introduced in the purification process can be effectively removed to reduce the impact on device performance;

(4) The arrangement of carbon nanotube films has a certain amountOrientation

The improved carbon nanotube thin film detector performance will be further improved and a high-performance photoelectric integrated system will be realized, so as to give full play to the advantages of carbon nanotube photoelectric devices and photoelectric integration.

Figure 3. Optoelectronic integrated system for carbon nanotubes.

Paper Information:

Cai X, Wang S, Peng L-M. Recent progress of photodetector based on carbon nanotube film and application in optoelectronic integration. Nano Research Energy, 2023,


Nano Research Energy is a companion journal of Nano Research, (ISSN: 2791-0091; e-ISSN: 2790-8119; Official Website: in March 2022, Professor Qu Liangti of Tsinghua University and Professor Chunyi Zhi of City University of Hong Kong serve as editors-in-chief.Nano Research EnergyIt is an international multidisciplinary and English-based open access journal, focusing on the cutting-edge research and application of nanomaterials and nanoscience and technology in new energy-related fields, benchmarking against top international energy journals, and committed to publishing high-level original research and review papers, which has been selected2022 China Science and Technology Journals Excellence Action Plan – High Starting Point New Journal Project。 APC fees will be waived until 2025, and teachers are welcome to submit their papers.

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