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Preparation strategy of large-scale perovskite single crystal array for photoelectric integration


Optoelectronic array devices require independent pixels as sensing units to achieve functional integration and application. Metal halide perovskite materials are considered to be ideal materials for constructing next-generation optoelectronic array devices due to their excellent optoelectronic properties, simple preparation methods and low production costs, which is expected to bring about a change in the design paradigm of traditional optoelectronic devices.

In recent years, perovskite polycrystalline thin-film arrays have been widely used in photodetectors, lasers and LEDs. Compared with perovskite polycrystalline, perovskite single crystal has better performance in stability and photoelectric performance. However, due to the poor chemical stability of perovskite materials in polar solvents, the most commonly used single-crystal patterned lithography and etching techniques are highly incompatible with perovskite materials, which limits their development in the field of optoelectronic devices. Therefore, it is important to find a method for large-scale controllable preparation of perovskite single crystal arrays.

Recently, the research group of researcher Pan Caofeng from the Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences reported a large-scale perovskite single crystal array preparation strategy for photoelectric integration (Figure 1). In this work, the research team developed a one-step space-constrained and anti-solvent assisted crystallization (SC-ASC) method to achieve the controlled growth of perovskite single crystal arrays through substrate engineering and space limitation, and applied it to laser arrays and photoelectric detection imaging applications.

Figure 1 (a) Schematic diagram of the preparation of a perovskite single crystal array. (b) 10 cm × 10 cm perovskite single crystal array. (c) SEM photograph of perovskite single crystal array. (d) Fluorescence photograph of patterned perovskite single crystals.

By combining traditional micromachining technology, the research team successfully prepared large-scale perovskite single crystal arrays with an area of 10 cm × 10 cm, and realized the regulation of crystal size, position, resolution and other parameters of perovskite single crystal arrays. At the same time, the rotation angle of individual pixels is regulated by epitaxial growth on lattice-matched substrates (strontium titanate and potassium tantalate), and the band regulation of perovskite single crystals can be achieved by changing the halogen element ratio of the precursor solution (Figure 2).

Fig. 2 Fully controllable growth of (a) size, (b) position, (c) rotation, and (d-g) bands of perovskite single crystal arrays.

Based on the universality of the method, the research team constructed perovskite single crystal laser arrays and photodetector arrays on different substrates and patterns. Perovskite single crystals can be used as high-quality microcavities emitted by WGM lasers with a high Q factor of 2915 and a low threshold of 4.14 μJ/cm2. Perovskite single crystal photodetector arrays prepared with vertical structure show excellent working stability and reliable imaging capabilities, which proves the feasibility of this method in optoelectronic integration applications (Figure 3).

Figure 3 (a) Darkfield diagram of the laser array. (b) Laser threshold statistics. (c) Lorentz fitting results of laser peaks. (d) Schematic diagram of the photodetector array structure. (f) Photocurrent imaging diagram.

prospect

The growth method of this perovskite single crystal array combines traditional lithography technology and perovskite solution treatment process, which can accurately control the characteristic parameters of the perovskite single crystal array, including pixel position, resolution, in-plane rotation, composition composition, etc., and realize the preparation of addressable photodetector array with vertical structure. This method has a wide range of application prospects in the field of large-scale integrated electronics and optoelectronic devices.

The research results were published in Light: Science & Applications under the title “Controlled On-chip Fabrication of Large-scale Perovskite Single Crystal Arrays for High-performance Laser and Photodetector Integration.” Xu Zhangsheng, a doctoral student at the Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences, Xun Han, associate researcher and Dr. Wenqiang Wu of Shenzhen University, are co-first authors, and the corresponding authors are researcher Pan Caofeng from Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences and associate researcher Xun Han from Shenzhen University. (Source: LightScience Applications WeChat public account)

Related paper information:https://www.nature.com/articles/s41377‍-023-0‍1107-4

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