The research on large-current-carrying and highly conductive carbon nanotube composite films has progressed

Conductor materials are the basic materials for information interaction, power transmission and energy conversion such as force, heat, light, electricity, magnetism, etc., and have important application value in aerospace, new energy vehicles, power lines and other fields. With the development of high-power devices, the demand for lightweight, large-current-carrying and high-conductivity materials is becoming more and more urgent. Single single-walled carbon nanotubes (SWCNT) have extremely high current carrying capacity and conductivity, the current carrying capacity is 2~3 orders of magnitude higher than that of traditional metal copper, and the conductivity is more than 1000 times that of silver. However, when SWCNT is assembled into a macro film, the current-carrying capacity and conductivity will be significantly reduced due to the influence of electron/phonon scattering between carbon tubes, which restricts the application of SWCNT film in the field of high-power devices.

In response to the above problems, Kang Lixing, a researcher at the Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences, proposed and developed a new large-current-carrying and highly conductive carbon nanotube composite thin film material. The research team used the chemical vapor transport method to uniformly and efficiently fill CuI into the SWCNT lumen to prepare CuI@SWCNT one-dimensional coaxial heterojunction. SWCNT has a protective effect on CuI, maintaining the electrochemical activity of CuI, enabling it to maintain stability under harsh acidic environments and long-term electrochemical cycles. Through electrical measurements, it was found that compared with SWCNT films, CuI@SWCNT film had better conductivity and stronger current-carrying capacity, and its current-carrying capacity increased by 4 times to 2.04×107 A/cm2, and the conductivity increased by 8 times to 31.67 kS/m. 

After the SWCNT is filled with CuI, electrons in the SWCNT flow to CuI, resulting in a decrease in the Fermi energy level of the SWCNT. At the same time, the structure of SWCNT in the van der Waals heterojunction CuI@SWCNT one-dimensional van der Waals heterojunction is not destroyed, and the carriers still maintain an efficient transfer rate, which makes the CuI@SWCNT film have higher conductivity and current-carrying capacity. CuI@SWCNT composite films have the potential to be used in future applications such as high-power electronic devices and high-current transmission.

The research results are titled CuI Encapsulated within Single-Walled Carbon Nanotube Networks with High Current Carrying Capacity and Excellent Conductivity, published in Advanced Functional Materials. The research work is supported by the National Key Research and Development Program of China and the National Natural Science Foundation of China. (Source: Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences)

Related paper information:

(a) Schematic diagram of the CuI@SWCNT synthesis process; (b) CuI@SWCNT transmission electron microscopy image with corresponding analog transmission electron microscopy image (c) and schematic diagram of the structural model (d); (e) CuI@SWCNT STEM diagram; (f-h) EDX element mapping diagram of C, Cu, and I.

(a-b) Raman spectra of SWCNT and CuI@SWCNT; (c) UV absorption spectra of SWCNTs and CuI@SWCNT; (d-f) CuI@SWCNT XPS spectra in C1s, Cu2p, and I3d. 

(a) Schematic diagram of the structure of the CuI@SWCNT device; (b) I-V characteristic curves of SWCNT and CuI@SWCNT devices; (c) Comparative chart of current-carrying capacity and conductivity of SWCNT and CuI@SWCNT; (d) Comparison of the current-carrying capacity of SWCNT and CuI@SWCNT with other nanowires. 

(a) cyclic voltammetry of CuI and CuI@SWNT, with arrows indicating scanning direction; (b) CuI and CuI@SWCNT peak current attenuation after 10 charge-discharge cycles; (e-f) Surface topography of SWCNT and CuI@SWCNT, and corresponding surface potentials in the same area; (g) Schematic diagram of the Fermi level of SWCNT after embedded CuI.Special statement: This article is reproduced only for the need to disseminate information, and does not mean to represent the views of this website or confirm the authenticity of its content; If other media, websites or individuals reprint and use from this website, they must retain the “source” indicated on this website and bear their own legal responsibilities such as copyright; If the author does not wish to be reprinted or contact the reprint fee, please contact us.

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